8/20 1 4 U232 n - channel dual silicon junction field - effect transistor ? differencial amplifier ? low & maximum frequency amplifier a bsolute maximum ratings at t a = 25 o c reverse gate sou rce & gate drain voltage - 5 0v continuous forward gate curren t 5 0 ma continuous devi ce power dissipation 300 mw power derating 1.7 mw/ o c storage temperature range - 65 o c to +150 o c at 25 o c free air temperature U232 process nj16 static elec trical characteristics min typ max unit test conditions gate source breakdown voltage v (br)gss - 50 v i g = - 1 ua, v ds = 0 v gate reverse current i gss - 0.1 na v gs = - 10 v, v ds = 0 v gate source cutoff voltage v gs(off) - 0.5 - 4.5 v v ds = 10 v , v gs = 0 v drain saturation current (pulsed) i dss 0.5 5 ma v ds = 10 v, v gs = 0 v dynamic electrical characteristics common - source forward transconductance g fs 1 3 ms v ds = 10 v, vgs = 0 v f = 1 khz common - source input capacitance c iss 6 pf v ds = 10v, i d = 5 ma f = 1 mhz common - source reverse transfer capacitance c rss 2 pf v ds = 10 v, i d = 5 ma f = 1 mhz equivalent short circuit input noise voltage ~e n 80 nv/hz v ds = 10 v, i d = 5 ma f = 100 hz matching characteristics min max units test conditions differencial gate - source voltage (vgs1 - vgs2) 10 mv vds = 10 v, id = - 10 ma differencial gate source voltage with temperature ?vgs1 - vgs2 t 25 v/c vdg = 10 v, id = 30 a www.interfet.com 715 n. glenville dr., ste. 400 richardson, tx 75089 (972) 238 - 9700 fax (972) 238 - 5338 surface mount version : smp U232
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